In the given figure, the potential difference between \(A\) and \(B\) is:

1.	\(0\)	2.	\(5\) volt
3.	\(10\) volt	4.	\(15\) volt

In a common-emitter transistor amplifier, the audio signal voltage across the collector is 3 V. The resistance of the collector is 3 k$\Omega$. If the current gain is 100 and the base resistance is 2 k$\Omega$, the voltage and power gain of the amplifier are:

1. 200 and 1000

2. 15 and 200

3. 150 and 15000

4. 20 and 2000

Which one of the following represents forward biased circuit?

1. 

2. 

3. 

4. 

The given circuit has two ideal diodes connected as shown in the figure below. The current flowing through the resistance \(R_1\) will be

1. \( 2.5\text{ A}\)

2. \( 10\text{ A}\)

3. \(1.43\text{ A}\)

4. \(3.13\text{ A}\)

To get output 1 for the following circuit, the correct choice for the input is

1. $A=1,<mspace\; width="1em"></mspace>B=0,<mspace\; width="1em"></mspace>C=0$       

2. $A=1,<mspace\; width="1em"></mspace>B=1,<mspace\; width="1em"></mspace>C=0$

3. $A=1,<mspace\; width="1em"></mspace>B=0,<mspace\; width="1em"></mspace>C=1$       

4. $A=0,<mspace\; width="1em"></mspace>B=1,<mspace\; width="1em"></mspace>C=0$

An n-p-n transistor is connected in the common base configuration in a given amplifier. A load resistance of 800Ω is connected in the collector circuit and the voltage drop across it is 0.8 V. If the current amplification factor is 0.96 and the input resistance of the circuits is 192 Ω the voltage gain and the power gain of the amplifier will respectively be

1. 3.69,3.84
2. 4,4
3. 4,3.69
4. 4,3.84

If in a \(\mathrm{p\text-n}\) junction, a square input signal of \(10\) V is applied as shown, then the output across \(R_L\) will be:
              

1.		2.
3.		4.

In the given figure, a diode D is connected to an external resistance R = 100 Ω  and an e.m.f of 3.5 V. If the barrier potential developed across the diode is 0.5 V, the current in the circuit will be


1. 30mA

2. 40mA

3. 20mA

4. 35mA

The given graph represents the \(V\text-I\) characteristics of a semiconductor device. Which of the following statements is correct?
 

The barrier potential of a p-n junction depends on

(i)type of semiconductor material

(ii)amount of doping

(iii)temperature

Which one of the following is correct

1. (i) and (ii)only

2. (ii) only

3. (ii) and (iii)only

4. (i),(ii) and (iii)